IRF636 transistor equivalent, n-channel mosfet transistor.
*High current , high speed switching
*Switch mode power supplies
*DC-DC converters for telecom, industrial,a.
*Drain Current
–ID=8.1A@ TC=25℃
*Drain Source Voltage-
: VDSS= 275V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max)
*Nanosecond Switching Speed
*High Input Impedance
APPLICATIONS
*High current ,.
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